Item Tag: Accessories

4-inch single-sided polished silicon wafer ultra-thick 1-3mm wafer silicon wafer single crystal silicon wafer Polished silicon wafers: high purity (11N) 1-12 inch single and double polished Czochralski wafersSizes: 1" 2" 3" 4" 5" 6" 8" 12" and special size and specification wafers Surface: single polishing disc, double polishing disc, abrasive disc, corrosion disc, cutting discOrientation: and silicon wafers with various off-angles Thickness: 100um 200um 300um 400um 500um 1mm 5mm etcConductivity type: N-type, P-type, undope (intrinsic high resistance)Single crystal method: Czochralski (CZ), Zone Melting (FZ), NTD (Central Photo)Resistivity: up to 1000 ohm.cm, > 3000 ohm.cm, > 5000 ohm.cm, >8000 ohm.cm, >10000 ohm.cm Process parameters: Flatness TIR: ≤3μm, Warpage TTV: ≤10μm,Bow/Warp≤40μm, roughness≤0.5nm, particle size 0.3μ) Processing customization: The processing time such as model, crystal orientation, thickness, resistivity, etc. is slightly different according to different specifications and parameters.Application introduction: used for synchrotron radiation sample carrier for process, PVD/CVD coating as substrate, magnetron sputtering growth sample, XRD, SEM, Atomic force, infrared spectroscopy, fluorescence spectroscopy and other analysis test substrates, molecular beam epitaxy growth substrates, X-ray analysis of crystalline semiconductors4-inch single-polish P-type, 100 crystal orientation, resistivity: 1-20ohm.cm, roughness <0.5nm, TTV<10, fine polishing quality. 1. Packing: 1PCS 2. Warranty period: 120 days